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2SJ106

Toshiba Semiconductor
Part Number 2SJ106
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ106 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ106 Audio Frequency Amplifier Applications A...
Datasheet PDF File 2SJ106 PDF File

2SJ106
2SJ106

Overview
2SJ106 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ106 Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications Unit: mm • High breakdown voltage: VGDS = 50 V • High input impedance: IGSS = 1.
0 nA (max) (VGS = 30 V) • Low RDS (ON): RDS (ON) = 270 Ω (typ.
) (IDSS = −5 mA) • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating 50 −10 150 125 −55~125 Unit V mA mW °C °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1B Weight: 0.
012 g (typ.
) Electrical Characteristics (Ta = 25°C) Characteristics Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Drain-source on resistance Input capacitance Reverse transfer capacitance Symbol Test Condition IGSS VGS = 30 V, VDS = 0 V (BR) GDS VDS = 0, IG = 100 μA IDSS (Note) VDS = −10 V, VGS = 0 VGS (OFF) ⎪Yfs⎪ RDS (ON) Ciss Crss VDS = −10 V, ID = −0.
1 μA VDS = −10 V, VGS = 0, f = 1 kHz VDS = −10 mV, VGS = 0 IDSS = −5 mA VDS = −10 V, VGS = 0, f = 1 MHz VDG = −10 V, ID = 0, f = 1 MHz Min Typ.
Max Unit ⎯ ⎯ 1.
0 nA 50 ⎯ ⎯ V −1.
2 ⎯ −14 mA 0.
3 ⎯ 6.
0 V 1.
0 4.
0 ⎯ mS ⎯ 270 ⎯ Ω ⎯ 18 ⎯ pF ⎯ 3.
6 ⎯ pF Note: IDSS classificati...


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