Silicon Junction FETs (Small Signal) 2SJ164 Silicon P-Channel Junction FET For switching Complementary to 2SK1104 s Features q Low ON-resistance q Low-noise characteristics unit: mm 4.
0±0.
2 3.
0±0.
2 0.
7±0.
1 s Absolute Maximum Ratings (Ta = 25°C) Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings 65 −20 −10 300 150 −55 to +150 Unit V mA mA mW °C °C 1.
27 1.
27 1 2 3 2.
0±0.
2 marking +0.
2 0.
45–0.
1 2.
54±0.
15 1: Source 2: Gate 3: Drain EIAJ: SC-72 New S Type Package s Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Ga...

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