Part Number
|
2SJ172 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
P-Channel MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
2SJ172
Silicon P-Channel MOS FET
November 1996 Application
High speed power switching
Features
• • • • Low on-resistan...
|
Datasheet
|
2SJ172
|
Overview
2SJ172
Silicon P-Channel MOS FET
November 1996 Application
High speed power switching
Features
• • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220AB
D G
1
2
3 1.
Gate 2.
Drain (Flange) 3.
Source
S
2SJ172
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tc...
Similar Datasheet