Part Number
|
2SJ186 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
P-Channel MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
2SJ186
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• • • • Low on-resistance High speed ...
|
Datasheet
|
2SJ186
|
Overview
2SJ186
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• • • • Low on-resistance High speed switching Low drive current Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
UPAK 2 1 4
3
D G 1.
Gate 2.
Drain 3.
Source 4.
Drain S
2SJ186
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings –200 ±15 –0.
5 –1.
0 –0.
5 1 150 –55 to +150
Unit V V A A A W °C °C
Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
When u...
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