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Part Number
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2SJ193 |
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Manufacturer
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Sanyo Semicon Device |
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Description
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P-Channel MOSFET |
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Published
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Mar 30, 2005 |
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Detailed Description
|
Ordering number:EN3766
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.
P-Channel Silico...
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Datasheet
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2SJ193
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Overview
Ordering number:EN3766
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
P-Channel Silicon MOSFET
2SJ193
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm 2062A
[2SJ193]
4.
5 1.
6
1.
5
1.
0 2.
5 4.
25max
0.
4 0.
5
32 1.
5
1
3.
0
0.
75
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
Conditions
PW≤10µs, duty cycle≤1% Tc=25˚C Mounted on ceramic board (250mm2× 0.
8mm)
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakd...
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