Part Number
|
2SJ504 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
P-Channel MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
2SJ504
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-546 Target specification 1st. Edition Features
• Lo...
|
Datasheet
|
2SJ504
|
Overview
2SJ504
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-546 Target specification 1st.
Edition Features
• Low on-resistance R DS(on) = 0.
042Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline
TO–220FM
D
G
S
1 2
1.
Gate 2.
Drain 3.
Source
3
2SJ504
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR I AP *
3 3 2 1
Ratings –60 ±20 –20 –80 –20 –20 34 30 150 –55 to +150
Unit V V A A A A mJ W °C °C
EAR*
...
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