2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-548 Target Specification 1st.
Edition Features • Low on-resistance R DS(on) = 0.
065 Ω typ.
(at V GS = –10V, ID = –5A) • Low drive current • High speed switching • 4V gate drive devices.
Outline DPAK–2 4 D 4 1 2 G 3 1 2 S 3 1.
Gate 2.
Drain 3.
Source 4.
Drain 2SJ506(L), 2SJ506(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch...

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