Part Number
|
2SJ529 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
Silicon P-Channel MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
2SJ529(L),2SJ529(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-654A (Z) 2nd. Edition Jun 1998 Feature...
|
Datasheet
|
2SJ529
|
Overview
2SJ529(L),2SJ529(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-654A (Z) 2nd.
Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.
12 Ω typ.
• 4 V gete drive devices • High speed switching
Outline
DPAK–2
4 D
4
1 2 G
3
1 2 S
3
1.
Gate 2.
Drain 3.
Source 4.
Drain
2SJ529(L),2SJ529(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings –60 ±20 –10 –40 –10 –10 8.
5 20 150 –55 to +150
U...
Similar Datasheet