Part Number
|
2SJ533 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
Silicon P-Channel MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
2SJ533
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-649B (Z) 3rd. Edition Jun 1998 Features
• Low on-re...
|
Datasheet
|
2SJ533
|
Overview
2SJ533
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-649B (Z) 3rd.
Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.
028 Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline
TO–220CFM
D
G
1 2 S
3
1.
Gate 2.
Drain 3.
Source
2SJ533
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)
Note1
Ratings –60 ±20 –30 –120 –30
Unit V V A A A A mJ W °C °C
Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP
Note3 Note3 Note2
–30 77 35 150 –55...
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