2SJ535 Silicon P Channel MOS FET High Speed Power Switching ADE-208-627B (Z) 3rd.
Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.
028 Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline TO–220FM D G S 1 2 1.
Gate 2.
Drain 3.
Source 3 2SJ535 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –30 –120 –30 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –30 77 35 150 –55 t...

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