2SJ547 Silicon P Channel MOS FET High Speed Power Switching ADE-208-658A (Z) 2nd.
Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.
16 Ω typ.
• 4 V gete drive devices • High speed switching Outline TO–220FM D G 1 2 S 1.
Gate 2.
Drain 3.
Source 3 2SJ547 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –10 –40 –10 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –10 8.
5 20 150 –55 to +150 EAR Pch Tch Ts...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)