2SJ549(L),2SJ549(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-644A (Z) 2nd.
Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.
11 Ω typ.
• Low drive current • 4 V gete drive devices • High speed switching Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1.
Gate 2.
Drain 3.
Source 4.
Drain S 2SJ549(L),2SJ549(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –12 –48 –12 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: I A...

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