2SJ567
TOSHIBA Field Effect
Transistor Silicon P-Channel MOS Type (π-MOSV)
2SJ567
Switching Applications
Chopper
Regulator, DC/DC Converter and Motor Drive Applications
6.
5 ± 0.
2 5.
2 ± 0.
2
Unit: mm
0.
6 MAX.
1.
5 ± 0.
2
• Low drain-source ON-resistance: RDS (ON) = 1.
6 Ω (typ.
) • High forward transfer admittance: |Yfs| = 2.
0 S (typ.
) • Low leakage current: IDSS = −100 μA (max) (VDS = −200 V) • Enhancement model: Vth = −1.
5 to −3.
5 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1.
2 MAX.
0.
8 MAX.
0.
6 ± 0.
15
1
1.
05 MAX.
23
1.
1 ± 0.
2 0.
6 MAX.
5.
5 ± 0.
2 9.
5 ± 0.
3
2.
3 ± 0.
2 0.
1 ± 0.
1
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 ...