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Part Number
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2SJ575 |
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Manufacturer
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Hitachi Semiconductor |
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Description
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Silicon P Channel MOS FET High Speed Switching |
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Published
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Mar 30, 2005 |
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Detailed Description
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2SJ575
Silicon P Channel MOS FET High Speed Switching
ADE-208-740B (Z) 3rd.Edition. June 1999 Features
• Low on-resista...
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Datasheet
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2SJ575
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Overview
2SJ575
Silicon P Channel MOS FET High Speed Switching
ADE-208-740B (Z) 3rd.
Edition.
June 1999 Features
• Low on-resistance R DS =2.
8 Ω typ.
(V GS = -10 V , I D = -50 mA) R DS =5.
7 Ω typ.
(V GS = -4 V , ID = -50 mA) • 4 V gate drive device.
• Small package (MPAK)
Outline
MPAK
3 1
D 3
2
2 G
1.
Source 2.
Gate 3.
Drain
S 1
2SJ575
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg
Note 2 Note1
Ratings -30 ±20 -100 -400 -100 400 150 –55 to +150
Unit V V mA mA mA mW °C...
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