Ordering number:ENN6384 P-Channel Silicon MOSFET 2SJ579 Ultrahigh-Speed Switching Applications Features · Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
Package Dimensions unit:mm 2062A [2SJ579] 4.
5 1.
6 1.
5 0.
5 3 1.
5 2 3.
0 0.
75 1 1.
0 0.
4 2.
5 4.
25max 0.
4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% 1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view) Conditions Ratings –60 ±20 –1.
2 –4.
8 1.
5 3.
5 150 –55 to +150 Unit V V A A W W ˚C ˚C M...

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