Part Number
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2SJ587 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
Silicon P Channel MOS FET High Speed Switching |
Published
|
Mar 30, 2005 |
Detailed Description
|
2SJ587
Silicon P Channel MOS FET High Speed Switching
ADE-208-801 (Z) 1st.Edition. June 1999 Features
• Low on-resistan...
|
Datasheet
|
2SJ587
|
Overview
2SJ587
Silicon P Channel MOS FET High Speed Switching
ADE-208-801 (Z) 1st.
Edition.
June 1999 Features
• Low on-resistance R DS = 8.
5 Ω typ.
(VGS = -4 V , I D = -25 mA) R DS = 15 typ.
(VGS = -2.
5 V , ID = -10 mA) • 2.
5 V gate drive device.
• Small package (SMPAK)
Outline
SMPAK
3 1 2 D 3
2 G
1.
Source 2.
Gate 3.
Drain
S 1
2SJ587
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg
Note 2 Note1
Ratings -20 ±10 -50 -200 -50 100 150 –55 to +150
Unit V V mA mA mA mW °C °...
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