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Part Number
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2SJ588 |
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Manufacturer
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Hitachi Semiconductor |
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Description
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Silicon P Channel MOS FET High Speed Switching |
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Published
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Mar 30, 2005 |
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Detailed Description
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2SJ588
Silicon P Channel MOS FET High Speed Switching
ADE-208-802 (Z) 1st.Edition. June 1999 Features
• Low on-resistan...
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Datasheet
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2SJ588
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Overview
2SJ588
Silicon P Channel MOS FET High Speed Switching
ADE-208-802 (Z) 1st.
Edition.
June 1999 Features
• Low on-resistance R DS =2.
8 Ω typ.
(V GS = -10 V , I D = -50 mA) R DS =5.
7 Ω typ.
(V GS = -4 V , I D = -50 mA) • 4 V gate drive device.
Outline
SPAK
D 3
12 3
2 G
1.
Source 2.
Drain 3.
Gate
S 1
2SJ588
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1.
PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg
Note1
Ratings -30 ±20 -100 -400 -100 300 150 –55 to +150
Unit V V mA mA mA mW °C...
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