DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK2112
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK2112 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V.
This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators, such as motors and DC/DC converters.
PACKAGE DIMENSIONS (in mm)
4.
5 ± 0.
1 1.
6 ± 0.
2
2.
5 ± 0.
1 4.
0 ± 0.
25
1.
5 ± 0.
1
0.
8 MIN.
S 0.
42 ±0.
06
D
G
FEATURES
• Low ON resistance RDS(on) = 1.
2 Ω MAX.
@VGS = 4.
0 V, ID = 0.
5 A • High switching speed ton + toff 100 ns • Low parasitic capacitance
0.
42 0.
47 ±0.
06 1.
5 ±0.
06 3.
0
0.
41+0.
03 –0.
05
...