2SK2116, 2SK2117
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching
regulator
Outline
TO-220CFM
D G
12 3
1.
Gate 2.
Drain 3.
Source
S
2SK2116, 2SK2117
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK2116 2SK2117 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25 °C Symbol VDSS VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 450 500 ±30 7 28 7 35 150 –55 to +...