Part Number
|
2SK2126 |
Manufacturer
|
Panasonic Semiconductor |
Description
|
Silicon N-Channel Power F-MOS FET |
Published
|
Mar 30, 2005 |
Detailed Description
|
Power F-MOS FETs
2SK2126
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS 100...
|
Datasheet
|
2SK2126
|
Overview
Power F-MOS FETs
2SK2126
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS 100mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 40ns q No secondary breakdown
unit: mm
4.
6±0.
2 φ3.
2±0.
1 9.
9±0.
3 2.
9±0.
2
s Applications
4.
1±0.
2 8.
0±0.
2 Solder Dip
13.
7–0.
2
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
15.
0±0.
3
3.
0±0.
2
+0.
5
1.
2±0.
15 1.
45±0.
15 0.
75±0.
1 2.
54±0.
2 5.
08±0.
4
2.
6±0.
1 0.
7±0.
1
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 50...
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