2SK2144
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching
regulator, DC-DC converter
Outline
TO-220CFM
D G
12 3
1.
Gate 2.
Drain 3.
Source
S
2SK2144
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 600 ±30 3 6 3 25 150 –55 to +150
Unit V V A A A W °C °C...