2SK2602
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2602
Switching
Regulator Applications
z Low drain−source ON-resistance : RDS (ON) = 0.
9 Ω (typ.
) z High forward transfer admittance : |Yfs| = 5.
5 S (typ.
) z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Ch...