2SK2606
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2606
DC−DC Converter, Relay Drive and Motor Drive Applications
Unit: mm
z Low drain−source ON resistance : RDS (ON) = 1.
0 Ω (typ.
) z High forward transfer admittance : |Yfs|= 7.
0 S (typ.
) z Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) z Enhancement mode : Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive av...