2SK2611
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2611
DC−DC Converter, Relay Drive and Motor Drive Applications
z Low drain−source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement−mode : RDS (ON) = 1.
2 Ω (typ.
) : |Yfs| = 7.
0 S (typ.
) Unit: mm
: IDSS = 100 μA (max) (VDS = 720 V) : Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 9 27 150 663 9 15 150 −55 to 150
www.
DataSheet.
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Unit V V V A A W 1.
GATE 2.
...