Part Number
|
2SK2685 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
GaAs HEMT |
Published
|
Mar 30, 2005 |
Detailed Description
|
2SK2685
GaAs HEMT
ADE-208-400 1st. Edition
Application
UHF low noise amplifier
Features
• Excellent low noise charact...
|
Datasheet
|
2SK2685
|
Overview
2SK2685
GaAs HEMT
ADE-208-400 1st.
Edition
Application
UHF low noise amplifier
Features
• Excellent low noise characteristics.
Fmin = 0.
83 dB Typ.
(3 V, 10 mA, 2 GHz) • High associated gain.
Ga = 17 dB Typ.
(3 V, 10 mA, 2 GHz) • High voltage.
VDS = 6 or more voltage.
• Small package.
(CMPAK-4)
Outline
CMPAK–4
2 3 4 1 1.
Source 2.
Gate 3.
Source 4.
Drain
2SK2685
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Gate to drain voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDSS VGSO VGDO ID Pch Tch Tstg Ratings 6 –6 –7 20 100 125 –55 to +125 Unit V V V mA mW °C °C
Attention: This device is very sensiti...
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