PRELIMINARY DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK3359
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3359 2SK3359-S 2SK3359-Z PACKAGE TO-220AB TO-262 TO-220SMD
DESCRIPTION
The 2SK3359 is N-Channel MOS Field Effect
Transistor designed for high current switching applications.
FEATURES
• Low on-state resistance RDS(on)1 = 20 mΩ MAX.
(VGS = 10 V, ID = 35 A) 5 5 RDS(on)2 = 28 mΩ MAX.
(VGS = 4.
5 V, ID = 30 A) • Low Ciss: Ciss = 4900 pF TYP.
• Built-in gate protection diode
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain...