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2SK3305

NEC
Part Number 2SK3305
Manufacturer NEC
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3305 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION P...
Datasheet PDF File 2SK3305 PDF File

2SK3305
2SK3305

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3305 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3305 2SK3305-S 2SK3305-ZJ PACKAGE TO-220AB TO-262 TO-263 DESCRIPTION The 2SK3305 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES • Low gate charge: QG = 13 nC TYP.
(VDD = 400 V, VGS = 10 V, ID = 5.
0 A) • Gate voltage rating: ±30 V • Low on-state resistance RDS(on) = 1.
5 Ω MAX.
(VGS = 10 V, ID = 2.
5 A) • Avalanche capability ratings (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 VDSS VGSS(AC) ID(DC) ID(pulse) PT PT Tch Tstg 500 ±30 ±5 ±20 75 1.
5 150 –55 to +150 5.
0 125 V V A A W W °C °C A mJ (TO-263) (TO-262) Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1.
PW ≤ 10 µs, Duty Cycle ≤ 1 % 2.
Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V ¡ 0 V The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
D14003EJ1V0DS00 (1st edition) Date Published March 2000 NS CP(K) Printed in Japan © 1998,2000 2SK3305 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS Drain Leakage Current Gate to Source Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Ch...


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