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2SK3304

NEC
Part Number 2SK3304
Manufacturer NEC
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3304 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK33...
Datasheet PDF File 2SK3304 PDF File

2SK3304
2SK3304

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3304 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3304 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply.
ORDERING INFORMATION PART NUMBER 2SK3304 PACKAGE TO-3P FEATURES • Low gate charge : QG = 44 nC TYP.
(VDD = 450 V, VGS = 10 V, ID = 7.
0 A) • Gate voltage rating : ±30 V • Low on-state resistance : RDS(on) = 2.
0 Ω MAX.
(VGS = 10 V, ID = 4.
0 A) • Avalanche capability ratings (TO-3P) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Note1 VDSS VGSS(AC) ID(DC) ID(pulse) PT PT Tstg Note2 Note2 900 ±30 ±7 ±21 130 3.
0 –55 to + 150 7 147 V V A A W W °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Storage Temperature Single Avalanche Current Single Avalanche Energy IAS EAS Notes 1.
PW ≤ 10 µs, Duty cycle ≤ 1 % 2.
Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
D13992EJ1V0DS00 (1st edition) Date Published June 2000 NS CP(K) Printed in Japan © 2000 2SK3304 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS Drain Leakage Current Gate to Source Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Cos...


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