DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK3366
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3366 is N-Channel MOS Field Effect
Transistor designed for DC/DC converter application of notebook computers.
FEATURES
• Low on-resistance RDS(on)1 = 21 mΩ (MAX.
) (VGS = 10 V, ID = 10 A) RDS(on)2 = 33 mΩ (MAX.
) (VGS = 4.
5 V, ID = 10 A) RDS(on)3 = 43 mΩ (MAX.
) (VGS = 4.
0 V, ID = 10 A) • Low Ciss : Ciss = 730 pF (TYP.
) • Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER 2SK3366 2SK3366-Z PACKAGE TO-251 TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse)
Note
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