2SK3397
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (U-MOS )
2SK3397
Relay Drive and DC-DC Converter Applications Motor Drive Applications
• • • • Low drain-source ON resistance: RDS (ON) = 4.
0 mΩ (typ.
) High forward transfer admittance: Yfs = 110 S (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement-model: Vth = 1.
5 to 3.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Tc = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range DC (...