Part Number
|
3N165 |
Manufacturer
|
Linear Integrated Systems |
Description
|
MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
3N165, 3N166
MONOLITHIC DUAL P-CHANNEL
Linear Integrated Systems
FEATURES
VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN...
|
Datasheet
|
3N165
|
Overview
3N165, 3N166
MONOLITHIC DUAL P-CHANNEL
Linear Integrated Systems
FEATURES
VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2) 3N165 3N166 Transient G-S Voltage (NOTE 3) Gate-Gate Voltage Drain Current (NOTE 2) Storage Temperature Operating Temperature Lead Temperature (Soldering, 10 sec.
) Power Dissipation (One Side) Total Derating above 25°C 40 V 30 V ±125 V ±80 V 50 mA -65°C to +200°C -55°C to +150°C +300°C 300 mW 4.
2 mW/°C
ENHANCEMENT MODE MOSFET
1
7 C G1 G2 D2 S
3
5
D1
8 4
Device Schematic
TO-99 Bottom View
ELECTRICAL CHARACTERISTICS (TA=2...
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