Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier 3N165 / 3N166 FEATURES CORPORATION • Very High Impedance • High Gate Breakdown • Low Capacitance PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (Note 1) (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage (Note 2) 3N165.
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40V 3N166.
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30V Transient Gate-Source Voltage (Note 3) .
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±125 Gate-Gate Voltage .
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±80V Drain Current (Note 2) .
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