Part Number
|
3N171 |
Manufacturer
|
Linear Integrated Systems |
Description
|
N-CHANNEL MOSFET ENHANCEMENT MODE |
Published
|
Mar 30, 2005 |
Detailed Description
|
3N170 3N171
Linear Integrated Systems
FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTA...
|
Datasheet
|
3N171
|
Overview
3N170 3N171
Linear Integrated Systems
FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE FAST SWITCHING ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Current Drain to Source Maximum Voltages Drain to Gate Drain to Source Gate to Source ±35V 25V ±35V 30mA * Body tied to Case.
300mW -65 to +150 °C -55 to +135 °C
1
N-CHANNEL MOSFET ENHANCEMENT MODE
rds(on) ≤ 200Ω td(on) ≤ 3.
0ns
TO-72 BOTTOM VIEW G
2 3
D
S
1
4
C
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated) ...
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