Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier 3N190 / 3N191 FEATURES CORPORATION • Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage (Note 1) 3N190, 3N191 .
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40V Transient Gate-Source Voltage (Note 1 and 2) .
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±125V Gate-Gate Voltage .
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±80V Drain Current (Note 1) .
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50mA Storage Temperature .
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-65oC to +200oC Operatin...

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