Part Number
|
3SK194 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
Silicon N-Channel Dual Gate MOS FET |
Published
|
Mar 30, 2005 |
Detailed Description
|
3SK194
Silicon N-Channel Dual Gate MOS FET
Application
VHF/UHF TV tuner RF amplifier
Outline
MPAK-4
2
3 1 4
1. Sour...
|
Datasheet
|
3SK194
|
Overview
3SK194
Silicon N-Channel Dual Gate MOS FET
Application
VHF/UHF TV tuner RF amplifier
Outline
MPAK-4
2
3 1 4
1.
Source 2.
Gate1 3.
Gate2 4.
Drain
3SK194
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 15 ±10 ±10 35 150 125 –55 to +125 Unit V V V mA mW °C °C
2
3SK194
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Gate 1 cutoff current Gate 2 cutoff current Symbol V(BR)DSX V(BR)G1SS V(BR)G2SS I G1S...
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