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3SK134B

NEC
Part Number 3SK134B
Manufacturer NEC
Description RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
Published Mar 30, 2005
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK134B RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT T...
Datasheet PDF File 3SK134B PDF File

3SK134B
3SK134B

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK134B RF AMP.
FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • High Power Gain : • Low Noise Figure : Gps = 23.
0 dB TYP.
(@ = 900 MHz) NF = 2.
4 dB TYP.
(@ = 900 MHz) PACKAGE DIMENSIONS (Unit : mm) 2.
8 +0.
2 – 0.
3 0.
4 +0.
1 – 0.
05 • Suitable for use as RF amplifier in UHF TV tuner.
• Automatically Mounting : • Surface Mount Package : Embossed Type Taping 4 Pins Mini Mold (EIAJ: SC-61) 2.
9±0.
2 0.
95 1.
5 +0.
2 – 0.
1 2 (1.
8) Gate1 to Source Voltage Gate2 to Source Voltage Gate1 to Drain Voltage Gate2 to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature *1 : RL ≥ 10 kΩ VG1S VG2S VG1D VG2D ID PD Tch Tstg ±8 (±10)*1 18 18 25 200 125 V V V V mA mW °C °C 1.
1 +0.
2 – 0.
1 ±8 (±10)*1 0.
85 Drain to Source Voltage VDSX 18 V 1 4 0.
6 +0.
1 – 0.
05 5o 5o 0.
8 0.
4 +0.
1 – 0.
05 0.
16 +0.
1 – 0.
05 5o 0 to 0.
1 –55 to +125 5o PIN CONNECTIONS 1.
Source 2.
Drain 3.
Gate2 4.
Gate1 PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage fields.
Document No.
P10566EJ2V0DS00 (2nd edition) (Previous No.
TD-2398) Date Published August 1995 P Printed in Japan © (1.
9) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) 3 0.
4 +0.
1 – 0.
05 1993 3SK134B ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Drain to Source Breakdown Voltage Drain Current Gate1 to Source Cutoff Voltage Gate2 to Source Cutoff Voltage Gate1 Reverse Current Gate2 Reverse Current Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Power Gain Noise Figure SYMBOL BVDSX IDSX VG1S(off) VG2SS(off) IG1SS IG2SS |yfs| Ciss Coss Crss Gps NF 20.
0 25.
0 1.
5 0.
6 29.
0 2.
5 1.
1 0.
02 23.
0 2.
4 3.
5 MIN.
18 0.
4 8.
0 –2.
0 –0.
7 ± 20 ± 20 35.
0 3.
5 1.
6 0.
03 TYP.
MAX.
UNIT V mA V V nA nA mS pF pF pF dB dB VDS = 10 V, VG2S = 4 V, ID = 10 mA f = 900 MHz VDS = 10 V, VG2S = 4 V, ID = 10 m...


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