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3SK135A

NEC
Part Number 3SK135A
Manufacturer NEC
Description RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD
Published Mar 30, 2005
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT T...
Datasheet PDF File 3SK135A PDF File

3SK135A
3SK135A

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP.
FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES • Suitable for use as RF amplifier in UHF TV tuner.
• Low Crss : 0.
02 pF TYP.
• High Gps : 18 dB TYP.
• Low NF : 2.
7 dB TYP.
PACKAGE DIMENSIONS in millimeters 0.
4+0.
1 –0.
05 2 2.
8+0.
2 –0.
3 1.
5+0.
2 –0.
1 –0.
06 0.
16 +0.
1 Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDSX VG1S* VG2S* ID PT Tch Tstg 5˚ 0 to 0.
1 20 ± 10 ± 10 25 200 150 –65 to +150 *RL ≥ 10 kΩ V V V mA mW ˚ C ˚ C 1 0.
6+0.
1 –0.
05 5˚ +0.
1 5˚ 0.
4–0.
05 +0.
2 1.
1–0.
1 0.
8 4 (1.
9) 1.
Source 2.
Drain 3.
Gate 2 4.
Gate 1 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) 2.
9±0.
2 (1.
9) 0.
95 0.
95 5˚ ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source Breakdown Voltage Drain Current Gate1 to Source Cutoff Voltage Gate2 to Source Cutoff Voltage Gate1 Reverse Current Gate2 Reverse Current Forward Transter Admittance SYMBOL BVDSX IDSS VG1S(off) VG2S(off) IG1SS IG2SS | yfs | 14 18 MIN.
20 0.
01 6 –2.
0 –0.
7 ± 20 ± 20 TYP.
MAX.
UNIT V mA V V nA nA ms TEST CONDITIONS VG1S = VG2S = –2 V, ID = 10 µA VDS = 5 V, VG2S = 4 V, VG1S = 0 VDS = 10 V, VG2S = 4 V, ID = 10 µA VDS = 10 V, VG1S = 4 V, ID = 10 µA VDS = 0, VG1S = ± 8 V, VG2S = 0 VDS = 0, VG2S = ± 8 V, VG1S = 0 VDS = 5 V, VG2S = 4 V, ID = 10 mA, f = 1 kHz VDS = 10 V, VG2S = 4 V, ID = 10 mA, f = 1 MHz Input Capacitance Output capacitance Reverse Transfer Capacitance Power Gain Noise Figure Ciss Coss Crss Gps* NF* 1.
5 0.
5 1.
0 0.
02 16 18 2.
7 2.
5 1.
5 0.
03 pF pF pF dB VDS = 10 V, VG2S = 4 V, ID = 10 mA, f = 900 MHz 4.
5 dB IDSS Classification Class Marking IDSS L/LS* U65 0.
01 to 2 K/KS* U66 1 to 6 * Old specification/New specification Document No.
P10411EJ1V0DS00 (1st edition) (Previous No.
TN-1758) Date Published August 1995 P Printed in Japan 3 0.
4+0.
1 –0.
05 © 1995 3SK135A TYPICAL CHARACT...


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