DatasheetsPDF.com

3SK131

NEC
Part Number 3SK131
Manufacturer NEC
Description MOS FIELD EFFECT TRANSISTOR
Published Apr 5, 2006
Detailed Description DATA SHEET SHEET DATA MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIEL...
Datasheet PDF File 3SK131 PDF File

3SK131
3SK131

Overview
DATA SHEET SHEET DATA MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP.
FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES • Suitable for use as RF amplifier in VHF TV tuner.
• Low Crss : 0.
05 pF TYP.
• High Gps : 23 dB TYP.
• Low NF : 1.
3 dB TYP.
PACKAGE DIMENSIONS (Unit: mm) 0.
4 −0.
05 0.
4 −0.
05 0.
4 −0.
05 0.
16 −0.
06 +0.
1 2.
8 −0.
3 1.
5 2 +0.
2 +0.
1 +0.
1 +0.
2 −0.
1 Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDSX VG1S VG2S ID PT Tch Tstg 20 V V V mA mW 0.
6 −0.
05 +0.
1 25 200 125 5° 5° 5° 0 to 0.
1 55 to +125 C C +0.
2 −3.
1 1.
1 0.
8 5° ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Drain to Source Breakdown Voltage Drain Current Gate1 to Source Cutoff Voltage Gate2 to Source Cutoff Voltage Gate1 Reverse Current Gate2 Reverse Current Forward Transfer Admittance SYMBOL BVDSX IDSS VG1S(OFF) VG2S(OFF) IG1SS IG2SS MIN.
20 7 10 25 TYP.
MAX.
UNIT V mA V V nA nA mS PIN CONNECTIONS 1.
Source 2.
Drain 3.
Gate 2 4.
Gate 1 TEST CONDITIONS VG1S = VG2S = 2 V, ID = 10 A VDS = 6 V, VG2S = 3 V, VG1S = 0 VDS = 8 V, VG2S = 0, ID = 5 A VDS = 8 V VG1S = 0, ID = 5 A VDS = 0, VG1S = 8 V, VG2S = 0 VDS = 0, VG2S = 8 V, VG1S = 0 VDS = 6 V, VG2S = 3 V, ID = 10 mA f = 1 kHz 2.
0 1.
5 20 20 22 28 yfs Input Capacitance Output Capacitance Reverse Transfer Capacitance Power Gain Noise Figure Ciss Coss Crss Cps NF 4.
0 2.
2 5.
0 2.
9 0.
05 6.
5 3.
7 0.
08 pF pF pF dB VDS = 6 V, VG2S = 3 V, ID = 10 mA f = 1 MHz 21 24 1.
2 2.
5 VDS = 10 V, VG2S = 5 V, ID = 10 mA f = 200 MHz dB IDSS classification V11 7-13 mA V12 11-19 mA V13 17-25 mA Document No.
P12449EJ2V0DS00 (2nd edition) (Previous No.
TC-1508) Date Published March 1997 N Printed in Japan © +0.
1 8 8 1 4 (1.
9) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) (1.
8) 0.
85 0.
95 2.
9±0.
2 3 1983 3SK131 TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION v...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)