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Part Number
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FDN336P |
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Manufacturer
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Fairchild Semiconductor |
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Description
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single P-Channel MOSFET |
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Published
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Mar 30, 2005 |
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Detailed Description
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November 1998
FDN336P Single P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P-Channel 2.5V spec...
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Datasheet
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FDN336P
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Overview
November 1998
FDN336P Single P-Channel 2.
5V Specified PowerTrenchTM MOSFET
General Description
This P-Channel 2.
5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Features
-1.
3 A, -20 V.
RDS(ON) = 0.
20 Ω @ VGS = -4.
5 V RDS(ON) = 0.
27 Ω @ VGS= -2.
5 V.
Low gate charge (3.
6 nC typical).
High performance trench technology for extremely low RDS(ON).
High power vers...
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