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FDN337N

ON Semiconductor
Part Number FDN337N
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Mar 22, 2020
Detailed Description Transistor - N-Channel, Logic Level, Enhancement Mode Field Effect FDN337N General Description SUPERSOTt−3 N−Channel l...
Datasheet PDF File FDN337N PDF File

FDN337N
FDN337N

Overview
Transistor - N-Channel, Logic Level, Enhancement Mode Field Effect FDN337N General Description SUPERSOTt−3 N−Channel logic level enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on−state resistance.
These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in−line power loss are needed in a very small outline surface mount package.
Features • 2.
2 A, 30 V ♦ RDS(on) = 0.
065 W @ VGS = 4.
5 V ♦ RDS(on) = 0.
082 W @ VGS = 2.
5 V • Industry Standard Outline SOT−23 Surface Mount Package Using Proprietary SUPERSOT−3 Design for Superior Thermal and Electrical Capabilities • High Density Cell Design for Extremely Low RDS(on) • Exceptional on−Resistance and Maximum DC Current Capability • This Device is Pb−Free and Halogen Free ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted.
Symbol Parameter Ratings Unit VDSS VGSS ID Drain−Source Voltage Gate−Source Voltage − Continuous Drain/Output Current – Continuous Drain/Output Current – Pulsed 30 V ±8 V 2.
2 A 10 PD Maximum Power Dissipation (Note 1a) 0.
5 W Maximum Power Dissipation (Note 1b) 0.
46 TJ, TSTG Operating and Storage Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS TA = 25°C unless otherwise noted.
Symbol Parameter RqJA Thermal Resistance, Junction−to−Ambient (Note 1a) RqJC Thermal Resistance, Junction−to−Case (Note 1) Ratings 250 Unit °C/W 75 °C/W DATA SHEET www.
onsemi.
com D G S SOT−23−3 CASE 527AG MARKING DIAGRAM &E&Y 337&E&G &E = Designates Space &Y = Binary Calendar Year Coding Scheme 337 = Spec...


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