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FDN338P

Part Number	FDN338P
Manufacturer	Fairchild Semiconductor
Description	P-Channel MOSFET
Published	Mar 30, 2005
Detailed Description	FDN338P FDN338P P-Channel 2.5V Specified PowerTrench® MOSFET November 2013 General Description This P-Channel 2.5V sp...
Datasheet	FDN338P PDF File

Overview

FDN338P FDN338P P-Channel 2.
5V Specified PowerTrench® MOSFET November 2013 General Description This P-Channel 2.
5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management applications.
Applications • Battery management • Load switch • Battery protection Features • –1.
6 A, –20 V.
RDS(ON) = 115 mΩ @ VGS = –4.
5 V RDS(ON) = 155 mΩ @ VGS = –2.
5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) • SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint DD S SuperSOTTM-3 G Absolute Maximum Ratings TA=25oC unless otherwise noted Sy...

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