GaAs FET HYBRID IC
MITSUBISHI SEMICONDUCTOR GaAs FET FA01215 GaAs FET HYBRID IC DESCRIPTION FA01215 is RF Hybrid IC designed for 900MHz band small size handheld radio. 0.6 2 3.5 14.7 14.2 2 3.5 2 Unit:mm FEATURES • Low voltage • High gain • High efficiency • High power 3.0V 24dB(typ.) 50% 34.5dBm 6 APPLICATION GSM IV 1 2 3 4 5 2.25 2.5 2.5 2.5 2.5 1.95 0.25±0.1...
Mitsubishi Electric Semiconductor