Built-in Damper Diode
sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5003 1500 800 6 7(Pulse14) 3.
5 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
2SC5003
(Ta=25°C) 2SC5003 100max 1max 1max 6min 8min 4 to 9 5max 1.
5max 2.
0max 4typ 100typ Unit µA mA mA V Conditions VCB=1200V VCB=1500V VCE=800V IEB=300mA VCE=5V, IC=1A VCE=5V, IC=5A IC=5A, IB=1.
2A IC=5A, IB=1.
2A IEC=7A VCE=12V, IE=–0.
5A VCB=10V, f=1MHz
0.
8±0.
2 15.
6±0.
2 23.
0±0.
3 9.
5±0.
2
Equivalent circuit
B
C
( 50 Ω )
E
Silicon
NPN Triple Diffused Planar
Transistor (High Voltage Switchihg
Transistor) sElectrical Characteristics
Symbol ICBO1 ICBO2 ICEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) VFEC fT COB
Applicat...