Transistors
2SC5019
Silicon
NPN epitaxial planar type
For UHF band low-noise amplification
Unit: mm
4.
5±0.
1
■ Features
1.
6±0.
2
1.
5±0.
1
• Low noise figure NF
2.
5±0.
1 3˚
4.
0–+00.
.
2205
• High maximum unilateral power gain GUM
• High transition frequency fT • Mini Power type package, allowing downsizing of the equip-
ment and automatic insertion through the tape packing and the magazine packing
1 0.
4±0.
08
1.
5±0.
1
23 0.
5±0.
08
3˚
1.
0–+00.
.
21
0.
4±0.
04
/ ■ Absolute Maximum Ratings Ta = 25°C
e e) Parameter
Symbol Rating
Unit
2.
6±0.
1
0.
4 max.
c e.
d typ Collector-base voltage (Emitter open) VCBO
15
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
10
V
a e cle co...