2SC5029
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT Process)
2SC5029
Power Amplifier Applications Power Switching Applications
Industrial Applications Unit: mm
• • • •
Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 1 A, IB = 0.
05 A) High collector power dissipation: PC = 1.
3 W High-speed switching: tstg = 1.
0 μs (typ.
) Complementary to 2SA1892
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 3 0.
2 1.
3 150 −55 to 150 Unit V V V A A W °C °C
JEDE...