Power
Transistors
2SC5035
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s Features
q q q q
4.
6±0.
2 φ3.
2±0.
1 9.
9±0.
3 2.
9±0.
2
4.
1±0.
2 8.
0±0.
2 Solder Dip
High-speed switching High collector to base voltage VCBO Low collector to emitter saturation voltage VCE(sat) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 800 800 500 8 10 5 3 40 2 150 –55 to +150 Unit V V V V A A A W ˚C ˚C
15.
0±0.
3
3.
0±0.
2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Col...