Power
Transistors
2SC5063
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching
10.
0±0.
3 1.
5±0.
1
8.
5±0.
2 6.
0±0.
5 3.
4±0.
3
Unit: mm
1.
0±0.
1
s Features
q q q q
1.
5max.
1.
1max.
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
(TC=25˚C)
Ratings 500 500 400 7 3 1.
5 0.
5 25 1.
3 150 –55 to +150 Unit V
10.
5min.
2.
0
0.
8±0.
1
0.
5max.
2.
54±0.
3 5.
08±0.
5 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector curre...