Power
Transistors
2SD1252, 2SD1252A
Silicon
NPN triple diffusion planar type
For power amplification Complementary to 2SB929 and 2SB929A
10.
0±0.
3
8.
5±0.
2 6.
0±0.
5
3.
4±0.
3
Unit: mm
1.
0±0.
1
s Features
q q q
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
(TC=25˚C)
Ratings 60 80 60 80 6 5 3 35 1.
3 150 –55 to +150 Unit V
1.
5±0.
1
1.
5max.
10.
5min.
2.
0
1.
1max.
0.
8±0.
1
0.
5max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1252 2SD1252A 2SD1252 Symbol VCB...