Power
Transistors
2SD1255
Silicon
NPN epitaxial planar type
For power switching Complementary to 2SB932
8.
5±0.
2 6.
0±0.
5
Unit: mm
3.
4±0.
3 1.
0±0.
1
10.
0±0.
3 1.
5±0.
1
s Features
q Low collector to emitter saturation voltage VCE(sat) q Satisfactory linearity of foward current transfer ratio hFE q Large collector current IC q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc.
of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction...