Power
Transistor (50V, 3A)
2SD1864
Features 1) Low VCE(sat).
VCE(sat) = 0.
5V (Typ.
) (IC/IB = 2A / 0.
2A) 2) Complements the 2SB1243.
Structure Epitaxial planar type
NPN silicon
transistor
Dimensions (Unit : mm)
2SD1864
6.
8±0.
2
2.
5±0.
2
4.
4±0.
2
1.
0 0.
9
0.
65Max.
14.
5±0.
5
0.
5±0.
1 (1) (2) (3)
2.
54 2.
54
1.
05
0.
45±0.
1
ROHM : ATV
(1) Emitter (2) Collector (3) Base
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
3 A (DC) IC 4.
5 A (Pulse) ∗1
Collector power dissipation
PC
1
W ∗2
Junction temperature
Tj 150 °C
Storage temperature
...